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rf & protection devices data sheet revision 1.0, 2014-08-05 BFR843EL3 robust low noise broadband pre-ma tched bipolar rf transistor
edition 2014-08-05 published by infineon technologies ag 81726 munich, germany ? 2014 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BFR843EL3 data sheet 3 revision 1.0, 2014-08-05 trademarks of infineon technologies ag aurix?, c166?, canpak?, ci pos?, cipurse?, econopac k?, coolmos?, coolset?, corecontrol?, crossav e?, dave?, di-pol?, easypim?, econobridge?, econodual?, econopim?, econopack?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, optimos?, origa?, powercode?; primarion?, pr imepack?, primestack?, pr o-sil?, profet?, rasic?, reversave?, satric?, si eget?, sindrion?, sipmos?, smartl ewis?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mipi? of mipi allianc e, inc. mips? of mips technologies, inc., u sa. murata? of murata manufacturing co., microwave office? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. openwave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of si rius satellite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of symbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. tektro nix? of tektronix inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilo g?, palladium? of cadence design systems, inc. vlynq? of texas instruments incorpor ated. vxworks?, wind river? of wind ri ver systems, inc. zetex? of diodes zetex limited. last trademarks update 2011-11-11 BFR843EL3, robust low noise broadband pre-matched bipolar rf transistor revision history: 2014-08-05, revision 1.0 page subjects (major cha nges since last revision)
BFR843EL3 table of contents data sheet 4 revision 1.0, 2014-08-05 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 list of figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 list of tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1product brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.1 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.2 general ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5.3 frequency dependent ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 characteristic dc diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 7 characteristic ac diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 8 simulation data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 9 package information tslp-3-10 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 table of contents
BFR843EL3 list of figures data sheet 5 revision 1.0, 2014-08-05 figure 4-1 total power dissipation p tot = f ( t s ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 figure 5-1 BFR843EL3 testing circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 figure 6-1 collector current vs . collector emitter voltage i c = f ( v ce ), i b = parameter . . . . . . . . . . . . . . . . . 16 figure 6-2 dc current gain h fe = f ( i c ), v ce = 1.8 v. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 figure 6-3 collector current vs. base emitter forward voltage i c = f ( v be ), v ce = 1.8 v . . . . . . . . . . . . . . . . 17 figure 6-4 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 1.8 v . . . . . . . . . . . . . . . . . . . 17 figure 6-5 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 1.8 v . . . . . . . . . . . . . . . . . . . 18 figure 7-1 3rd order intercept point at output oip3 = f ( i c ), z s = z l = 50 ? , v ce , f = parameters . . . . . . . . 19 figure 7-2 3rd order intercept point at output oip3 [dbm] = f ( i c , v ce ), z s = z l = 50 ? , f = 5.5 ghz . . . . . . 19 figure 7-3 compression point at output op 1db [dbm] = f ( i c , v ce ), z s = z l = 50 ? , f = 5.5 ghz . . . . . . . . . . 20 figure 7-4 gain g ma , g ms , i s 21 i2 = f ( f ), v ce = 1.8 v, i c = 15 ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 figure 7-5 maximum power gain g max = f ( i c ), v ce = 1.8 v, f = parameter in ghz . . . . . . . . . . . . . . . . . . . . 21 figure 7-6 maximum power gain g max = f ( v ce ), i c = 15 ma, f = parameter in ghz . . . . . . . . . . . . . . . . . . . 21 figure 7-7 input reflection coefficient s 11 = f ( f ), v ce = 1.8 v, i c = 8 / 15 ma . . . . . . . . . . . . . . . . . . . . . . . . 22 figure 7-8 source impedance for minimum noise figure z opt = f ( f ), v ce = 1.8 v, i c = 8 / 15 ma . . . . . . . . . 22 figure 7-9 output reflection coefficient s 22 = f ( f ), v ce = 1.8 v, i c = 8 / 15 ma . . . . . . . . . . . . . . . . . . . . . . . 23 figure 7-10 noise figure nf min = f ( f ), v ce = 1.8 v, i c = 8 / 15 ma, z s = z opt . . . . . . . . . . . . . . . . . . . . . . . . . . 23 figure 7-11 noise figure nf min = f ( i c ), v ce = 1.8 v, z s = z opt , f = parameter in ghz . . . . . . . . . . . . . . . . . . . 24 figure 7-12 noise figure nf 50 = f ( i c ), v ce = 1.8 v, z s = 50 ? , f = parameter in ghz . . . . . . . . . . . . . . . . . . . 24 figure 9-1 package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 9-2 package footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 9-3 marking description (marking BFR843EL3: t2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 figure 9-4 tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 list of figures
BFR843EL3 list of tables data sheet 6 revision 1.0, 2014-08-05 table 3-1 maximum ratings at t a = 25 c (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 table 4-1 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 table 5-1 dc characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5-2 general ac characteristics at t a = 25 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 table 5-3 ac characteristics, v ce =1.8v, f = 450 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 5-4 ac characteristics, v ce =1.8v, f = 900 mhz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 table 5-5 ac characteristics, v ce =1.8v, f = 1.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-6 ac characteristics, v ce =1.8v, f = 1.9 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 table 5-7 ac characteristics, v ce =1.8v, f = 2.4 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 5-8 ac characteristics, v ce =1.8v, f = 3.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 5-9 ac characteristics, v ce =1.8v, f = 5.5 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 table 5-10 ac characteristics, v ce =1.8v, f = 10 ghz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 list of tables
BFR843EL3 product brief data sheet 7 revision 1.0, 2014-08-05 1 product brief the BFR843EL3 is a low noise broadband npn bipolar rf transistor. its integrated feedback provides a broadband pre-match to 50 ? at input and output and improv es the stability against parasitic oscillations. these measures simplify the design of arbitrary lna application circuits. the device is based on infineon?s reliable high volume silicon germanium carbon (sig e:c) heterojunction bipolar techno logy. the collector design supports voltages up to v ceo = 2.25 v and currents up to i c = 55 ma. the device is especially suited for mobile applications in which low power consumption is a key requirement. the tran sistor is fitted with intern al protection circuits, which enhance the robustness against electrostatic discharge (esd) and against high levels of rf input power. the device is housed in a very small thin leadless plastic package, ideal for modules.
BFR843EL3 features data sheet 8 revision 1.0, 2014-08-05 2 features applications as low noise amplifier (lna) in ? wireless communications: wlan i eee802.11b,g,n,a,ac single- and dual band applicatio ns, broadband lte or wimax lna ? satellite navigation syst ems (e.g. gps, glonass, compass...) and sa tellite c-band lnb (1 st and 2nd stage lna) ? broadband amplifiers: dualband wlan, multiband mobile phone, uwb up to 10 ghz ? ism bands up to 10 ghz ? dedicated short range communication (dsrc) systems: wlan ieee802.11p attention: esd (electrostatic discharge) sensitive device, observe handling precautions ? low noise broadband npn rf transistor based on infineons reliable, high volume sige:c bipolar technology ? high maximum rf input power and esd robustness ? unique combination of high rf performance, robustness and ease of application circuit design ? low noise figure: nf min = 1 db at 2.4 ghz and 1.15 db at 5.5 ghz, 1.8 v, 8 ma ? high gain | s 21 | 2 = 22 db at 2.4 ghz and 16.5 db at 5.5 ghz, 1.8 v, 15 ma ? oip 3 = 22 dbm at 2.4 ghz and 5.5 ghz, 1.8 v, 25 ma ? ideal for low voltage applications e.g. v cc = 1.2 v and 1.8 v (2.85 v, 3.3 v, 3.6 v requires corresponding collector resistor) ? low power consumption, ideal for mobile applications ? pb-free (rohs compliant) and halogen-free very small thin leadless plastic package product name package pin configuration marking BFR843EL3 tslp-3-10 1 = b 2 = c 3 = e t2
BFR843EL3 maximum ratings data sheet 9 revision 1.0, 2014-08-05 3 maximum ratings attention: stresses above the max. values listed here may cause permanent damage to the device. exposure to absolute maximum rating conditions for extended periods may affect device reliability. maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. table 3-1 maximum ratings at t a = 25 c (unless otherwise specified) parameter symbol values unit note / test condition min. max. collector emitter voltage v ceo ?2.25 2.0 v t a = 25 c t a = -55 c open base collector emitter voltage 1) 1) v ces is identical to v ceo due to design v ces ?2.25 2.0 v t a = 25 c t a = -55 c e-b short circuited collector base voltage 2) 2) v cbo is similar to v ceo due to design v cbo ?2.9 2.6 v t a = 25 c t a = -55 c open emitter base current i b -1 5 ma collector current i c ?55ma rf input power p rfin ?20dbm f = 1.9 ghz, matched to 50 ? esd stress pulse v esd -1 +1 kv hbm, all pins, acc. to jesd22-a114 total power dissipation 3) 3) t s is the soldering point temperature . t s is measured on the emitter lead at the soldering point of the pcb. p tot ?125mw t s 103 c junction temperature t j ?150c storage temperature t stg -55 150 c
BFR843EL3 thermal characteristics data sheet 10 revision 1.0, 2014-08-05 4 thermal characteristics figure 4-1 total power dissipation p tot = f ( t s ) table 4-1 thermal resistance parameter symbol values unit note / test condition min. typ. max. junction - soldering point 1) 1) for the definition of r thjs please refer to application note an077 (thermal resistance calculation). r thjs ?375?k/w? 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 100 110 120 130 t s [c] p tot [mw]
BFR843EL3 electrical characteristics data sheet 11 revision 1.0, 2014-08-05 5 electrical characteristics 5.1 dc characteristics 5.2 general ac characteristics table 5-1 dc characteristics at t a = 25 c parameter symbol values unit note / test condition min. typ. max. collector emitter breakdown voltage v (br)ceo 2.25 2.6 v i c = 1 ma, i b = 0 open base collector emitter leakage current i ces ??400na v ce = 1.5 v, v be = 0 e-b short circuited collector base leakage current i cbo ??400na v cb = 1.5 v, i e = 0 open emitter emitter base leakage current i ebo ??10 a v eb = 0.5 v, i c = 0 open collector dc current gain h fe 230 ? 360 260 580 ? v ce = 1.8 v, i c = 1 ma v ce = 1.8 v, i c = 15 ma pulse measured table 5-2 general ac characteristics at t a = 25 c parameter symbol values unit note / test condition min. typ. max. collector base capacitance 1) 1) including integrated feedback capacitance c cb ?5.26 0.07 ?pf f = 1 mhz f = 1 ghz v cb = 1.8 v, v be = 0 emitter grounded collector emitte r capacitance c ce ?0.42?pf f = 1 mhz v ce = 1.8 v, v be = 0 base grounded emitter base capacitance c eb ?0.66?pf f = 1 mhz v eb = 0.4 v, v cb = 0 collector grounded
BFR843EL3 electrical characteristics data sheet 12 revision 1.0, 2014-08-05 5.3 frequency dependent ac characteristics measurement setup is a test fixture with bias t?s in a 50 ? system, t a = 25 c figure 5-1 BFR843EL3 testing circuit table 5-3 ac characteristics, v ce =1.8v, f = 450 mhz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 25.5 24.5 ? ? db i c =15ma i c =15ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.95 22.5 ? ? db i c =8ma i c =8ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 7.5 23 ? ? dbm z s = z l =50 ? i c =15ma i c =15ma table 5-4 ac characteristics, v ce =1.8v, f = 900 mhz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 25 24 ? ? db i c =15ma i c =15ma rf- in rf- out v b in v c out gnd 12 3 bias-t bias -t
BFR843EL3 electrical characteristics data sheet 13 revision 1.0, 2014-08-05 minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.95 22 ? ? db i c =8ma i c =8ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 7 21.5 ? ? dbm z s = z l =50 ? i c =15ma i c =15ma table 5-5 ac characteristics, v ce =1.8v, f = 1.5 ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 24.5 23 ? ? db i c =15ma i c =15ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 0.95 21.5 ? ? db i c =8ma i c =8ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 7 21.5 ? ? dbm z s = z l =50 ? i c =15ma i c =15ma table 5-6 ac characteristics, v ce =1.8v, f = 1.9 ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 24.5 22.5 ? ? db i c =15ma i c =15ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 1 21 ? ? db i c =8ma i c =8ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 7 21 ? ? dbm z s = z l =50 ? i c =15ma i c =15ma table 5-4 ac characteristics, v ce =1.8v, f = 900 mhz (cont?d) parameter symbol values unit note / test condition min. typ. max.
BFR843EL3 electrical characteristics data sheet 14 revision 1.0, 2014-08-05 table 5-7 ac characteristics, v ce =1.8v, f = 2.4 ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 24 22 ? ? db i c =15ma i c =15ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 1 20 ? ? db i c =8ma i c =8ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 6 20.5 ? ? dbm z s = z l =50 ? i c =15ma i c =15ma table 5-8 ac characteristics, v ce =1.8v, f = 3.5 ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 23 19.5 ? ? db i c =15ma i c =15ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 1.05 18.5 ? ? db i c =8ma i c =8ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 6 20.5 ? ? dbm z s = z l =50 ? i c =15ma i c =15ma table 5-9 ac characteristics, v ce =1.8v, f = 5.5 ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 21.5 16.5 ? ? db i c =15ma i c =15ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 1.15 15.5 ? ? db i c =8ma i c =8ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 4.5 20.5 ? ? dbm z s = z l =50 ? i c =15ma i c =15ma
BFR843EL3 electrical characteristics data sheet 15 revision 1.0, 2014-08-05 note: oip3 value depends on termination of all intermodulatio n frequency components. termination used for this measurement is 50 ? from 0.2 mhz to 12 ghz. table 5-10 ac characteristics, v ce =1.8v, f = 10 ghz parameter symbol values unit note / test condition min. typ. max. power gain maximum power gain transducer gain g ms | s 21 | 2 ? ? 14.5 10.5 ? ? db i c =15ma i c =15ma minimum noise figure minimum noise figure associated gain nf min g ass ? ? 1.35 10.5 ? ? db i c =8ma i c =8ma linearity 1 db compression point at output 3rd order intercept point at output op 1db oip3 ? ? 1.5 17 ? ? dbm z s = z l =50 ? i c =15ma i c =15ma
BFR843EL3 characteristic dc diagrams data sheet 16 revision 1.0, 2014-08-05 6 characteristic dc diagrams figure 6-1 collector current vs . collector emitter voltage i c = f ( v ce ), i b = parameter figure 6-2 dc current gain h fe = f ( i c ), v ce = 1.8 v 0 0.5 1 1.5 2 2.5 0 2 4 6 8 10 12 14 16 18 20 22 v ce [v] i c [ma] 10a 20a 30a 40a 50a 60a 70a 80a 90a 10 ?2 10 ?1 10 0 10 1 10 2 10 2 10 3 i c [ma] h fe
BFR843EL3 characteristic dc diagrams data sheet 17 revision 1.0, 2014-08-05 figure 6-3 collector current vs. base emitter forward voltage i c = f ( v be ), v ce = 1.8 v figure 6-4 base current vs. base emitter forward voltage i b = f ( v be ), v ce = 1.8 v 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 1 10 2 v be [v] i c [ma] 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 10 ?7 10 ?6 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 v be [v] i b [ma]
BFR843EL3 characteristic dc diagrams data sheet 18 revision 1.0, 2014-08-05 figure 6-5 base current vs. base emitter reverse voltage i b = f ( v eb ), v ce = 1.8 v 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 10 ?11 10 ?10 10 ?9 10 ?8 10 ?7 10 ?6 v eb [v] i b [a]
BFR843EL3 characteristic ac diagrams data sheet 19 revision 1.0, 2014-08-05 7 characteristic ac diagrams figure 7-1 3rd order intercept point at output oip3 = f ( i c ), z s = z l = 50 ? , v ce , f = parameters figure 7-2 3rd order intercept point at output oip3 [dbm] = f ( i c , v ce ), z s = z l = 50 ? , f = 5.5 ghz 0 5 10 15 20 25 30 35 0 2 4 6 8 10 12 14 16 18 20 22 24 i c [ma] oip 3 [dbm] 1.5v, 2400mhz 1.8v, 2400mhz 1.5v, 5500mhz 1.8v, 5500mhz 7 8 9 9 10 10 11 11 12 12 13 13 14 14 15 15 15 15 15 16 16 16 16 16 16 17 17 17 17 17 17 17 18 18 18 18 18 18 19 19 19 19 19 19 20 20 20 20 20 21 21 21 21 22 22 22 23 7 v ce [v] i c [ma] 1 1.2 1.4 1.6 1.8 2 5 10 15 20 25 30 35
BFR843EL3 characteristic ac diagrams data sheet 20 revision 1.0, 2014-08-05 figure 7-3 compression point at output op 1db [dbm] = f ( i c , v ce ), z s = z l = 50 ? , f = 5.5 ghz figure 7-4 gain g ma , g ms , i s 21 i2 = f ( f ), v ce = 1.8 v, i c = 15 ma ?5 ?5 ? 4 ?4 ?4 ?4 ?3 ?3 ?3 ?3 ?2 ?2 ?2 ?2 ? 1 ? 1 ?1 ?1 ?1 0 0 0 0 0 1 1 1 1 1 2 2 2 2 2 2 3 3 3 3 3 3 4 4 4 4 4 4 5 5 5 5 5 6 6 6 6 7 7 7 v ce [v] i c [ma] 1 1.2 1.4 1.6 1.8 2 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 8 9 10 11 12 8 10 12 14 16 18 20 22 24 26 28 30 f [ghz] g [db] g ms g ma |s 21 | 2
BFR843EL3 characteristic ac diagrams data sheet 21 revision 1.0, 2014-08-05 figure 7-5 maximum power gain g max = f ( i c ), v ce = 1.8 v, f = parameter in ghz figure 7-6 maximum power gain g max = f ( v ce ), i c = 15 ma, f = parameter in ghz 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 i c [ma] g max [db] 0.45ghz 0.90ghz 1.50ghz 1.90ghz 2.40ghz 3.50ghz 5.50ghz 10.00ghz 12.00ghz 0 0.5 1 1.5 2 2.5 8 10 12 14 16 18 20 22 24 26 28 30 v ce [v] g max [db] 0.45ghz 0.90ghz 1.50ghz 1.90ghz 2.40ghz 3.50ghz 5.50ghz 10.00ghz 12.00ghz
BFR843EL3 characteristic ac diagrams data sheet 22 revision 1.0, 2014-08-05 figure 7-7 input refl ection coefficient s 11 = f ( f ), v ce = 1.8 v, i c = 8 / 15 ma figure 7-8 source impedance for minimum noise figure z opt = f ( f ), v ce = 1.8 v, i c = 8 / 15 ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 1.0 7.0 9.0 10.0 0.03 to 12 ghz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 0.03 1.0 2.0 3.0 4.0 5.0 6.0 8.0 11.0 12.0 0.03 8ma 15ma 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 0.45 to 10 ghz 0.45 to 10 ghz 0.45 0.9 1.5 1.9 2.4 3.5 5.5 8.0 10.0 0.45 3.5 5.5 8.0 10.0 8ma 15ma
BFR843EL3 characteristic ac diagrams data sheet 23 revision 1.0, 2014-08-05 figure 7-9 output reflection coefficient s 22 = f ( f ), v ce = 1.8 v, i c = 8 / 15 ma figure 7-10 noise figure nf min = f ( f ), v ce = 1.8 v, i c = 8 / 15 ma, z s = z opt 1 0.1 0.2 0.3 0.4 0.5 2 1.5 3 4 5 0 1 ?1 1.5 ?1.5 2 ?2 3 ?3 4 ?4 5 ?5 10 ?10 0.5 ?0.5 0.1 ?0.1 0.2 ?0.2 0.3 ?0.3 0.4 ?0.4 1.0 1.0 0.03 to 12 ghz 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 0.03 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 0.03 8ma 15ma 0 1 2 3 4 5 6 7 8 9 10 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 f [ghz] nf min [db] i c = 8ma i c = 15ma
BFR843EL3 characteristic ac diagrams data sheet 24 revision 1.0, 2014-08-05 figure 7-11 noise figure nf min = f ( i c ), v ce = 1.8 v, z s = z opt , f = parameter in ghz figure 7-12 noise figure nf 50 = f ( i c ), v ce = 1.8 v, z s = 50 ? , f = parameter in ghz note: the curves shown in this chapter have been generate d using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. t a =25c. 0 5 10 15 20 25 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 i c [ma] nf min [db] f = 0.9ghz f = 2.4ghz f = 3.5ghz f = 5.5ghz f = 10ghz 0 5 10 15 20 25 0 0.5 1 1.5 2 2.5 3 3.5 4 i c [ma] nf 50 [db] f = 0.9ghz f = 2.4ghz f = 3.5ghz f = 5.5ghz f = 10ghz
BFR843EL3 simulation data data sheet 25 revision 1.0, 2014-08-05 8 simulation data for the spice gummel poon (gp) model as well as fo r the s-parameters (including noise parameters) please refer to our internet website. please consult our website and download the latest versions before actually starting your design. you find the BFR843EL3 spice gp model in the internet in mwo- and ads-format, which you can import into these circuit simulation tools very qu ickly and conveniently. the model alre ady contains the package parasitics and is ready to use for dc and high frequency simulations. the terminals of the model circuit correspond to the pin configuration of the device. the model parameters have been extracted and verified up to 12 ghz using typical devices. the BFR843EL3 spice gp model reflects the typical dc- and rf-performan ce within the limitations wh ich are given by the spice gp model itself. besides the dc charac teristics all s-parameters in magnitude and phase, as well as noise figure (including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have been extracted.
BFR843EL3 package information tslp-3-10 data sheet 26 revision 1.0, 2014-08-05 9 package information tslp-3-10 figure 9-1 package outline figure 9-2 package footprint figure 9-3 marking descriptio n (marking BFR843EL3: t2) figure 9-4 tape dimensions tslp-3-10-po v01 pin 1 marking top view bottom view 2 1 0.035 0.5 3 0.575 0.035 0.4 0.035 0.25 2x 0.035 0.15 2x 0.32 max. 0.02 max. 0.05 1 0.6 0.05 0.35 0.25 a b 0.1 b 0.1 b 0.1 a 0.1 a stencil apertures copper solder mask 0.38 0.2 0.315 0.95 0.5 0.17 0.255 0.2 0.45 0.225 1 0.6 0.225 0.15 0.35 0.2 r0.1 r0.19 tslp-3-10-fp v01 tslp-3-10-tp v01 0.8 4 1.2 0.35 pin 1 marking 8
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